國家知識產權局(ju)信息顯示，國電(dian)投新能(neng)源科技有限公司(si)申(shen)請一項名為“異質結(jie)太陽(yang)能(neng)電(dian)池的制備方法和異質結(jie)太陽(yang)能(neng)電(dian)池”的專(zhuan)利(li)，公開號(hao)CN120692955A，申(shen)請日期為2025年(nian)06月。

專利(li)摘要顯示，本申請提供了(le)一(yi)(yi)種異質結太陽(yang)電池的(de)(de)制備方(fang)法和(he)一(yi)(yi)種異質結太陽(yang)能(neng)(neng)電池，包括：將硅(gui)(gui)片雙面制絨；在(zai)(zai)(zai)硅(gui)(gui)片的(de)(de)第(di)(di)一(yi)(yi)面依次沉(chen)積第(di)(di)一(yi)(yi)本征非(fei)晶(jing)(jing)硅(gui)(gui)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)和(he)第(di)(di)一(yi)(yi)摻雜(za)硅(gui)(gui)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)；第(di)(di)二(er)(er)面依次沉(chen)積第(di)(di)二(er)(er)本征非(fei)晶(jing)(jing)硅(gui)(gui)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)和(he)第(di)(di)二(er)(er)摻雜(za)硅(gui)(gui)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)；在(zai)(zai)(zai)第(di)(di)一(yi)(yi)摻雜(za)硅(gui)(gui)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)和(he)第(di)(di)二(er)(er)摻雜(za)硅(gui)(gui)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)上，分別(bie)設置(zhi)第(di)(di)一(yi)(yi)透(tou)(tou)(tou)明(ming)導電氧(yang)(yang)化(hua)(hua)(hua)(hua)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)和(he)第(di)(di)二(er)(er)透(tou)(tou)(tou)明(ming)導電氧(yang)(yang)化(hua)(hua)(hua)(hua)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)；在(zai)(zai)(zai)第(di)(di)一(yi)(yi)透(tou)(tou)(tou)明(ming)導電氧(yang)(yang)化(hua)(hua)(hua)(hua)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)和(he)第(di)(di)二(er)(er)透(tou)(tou)(tou)明(ming)導電氧(yang)(yang)化(hua)(hua)(hua)(hua)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)上，分別(bie)印刷第(di)(di)一(yi)(yi)銀柵線(xian)和(he)第(di)(di)二(er)(er)銀柵線(xian)；在(zai)(zai)(zai)第(di)(di)一(yi)(yi)透(tou)(tou)(tou)明(ming)導電氧(yang)(yang)化(hua)(hua)(hua)(hua)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)和(he)第(di)(di)二(er)(er)透(tou)(tou)(tou)明(ming)導電氧(yang)(yang)化(hua)(hua)(hua)(hua)薄(bo)(bo)(bo)(bo)膜(mo)(mo)(mo)層(ceng)(ceng)(ceng)(ceng)上，分別(bie)沉(chen)積第(di)(di)一(yi)(yi)硅(gui)(gui)疊層(ceng)(ceng)(ceng)(ceng)和(he)第(di)(di)二(er)(er)硅(gui)(gui)疊層(ceng)(ceng)(ceng)(ceng)；通(tong)過設置(zhi)第(di)(di)一(yi)(yi)硅(gui)(gui)疊層(ceng)(ceng)(ceng)(ceng)和(he)第(di)(di)二(er)(er)硅(gui)(gui)疊層(ceng)(ceng)(ceng)(ceng)而(er)替(ti)代現有技術(shu)中(zhong)的(de)(de)氧(yang)(yang)化(hua)(hua)(hua)(hua)銦錫(xi)，從(cong)而(er)使得成本降(jiang)低的(de)(de)情況下，太陽(yang)能(neng)(neng)電池對光(guang)吸收的(de)(de)效果越好(hao)。

天眼查(cha)(cha)資(zi)(zi)料顯示，國電投新能(neng)(neng)源(yuan)科(ke)技有限公(gong)司，成立于2017年，位于南昌市，是一家以從事其(qi)他制(zhi)造(zao)業為主(zhu)的企業。企業注冊資(zi)(zi)本(ben)8500萬人民幣。通(tong)過天眼查(cha)(cha)大數據分析，國電投新能(neng)(neng)源(yuan)科(ke)技有限公(gong)司共對外(wai)(wai)投資(zi)(zi)了3家企業，參與(yu)招投標項(xiang)目(mu)24次，財產線索方面(mian)有商標信息(xi)11條，專利信息(xi)96條，此(ci)外(wai)(wai)企業還擁有行政許可21個。